Dia..:　CZ 4"～CZ8" N　or　P　Tpye

Res.:0.001-1000ohm-cm，

Thickness：SEMI Standard or as per customers’ requests

Doping ：EPI Substrate B 、P、As、Sb；EPI layer 　B、P

Dislocation/Slip/Crack/Chip/Pin Hole/Broken：Free

SiC Wafer:2inch,4inch,6inch for both N  and Semi type

GaAs Wafer:2",4" and 6" as customers' specs

LT,LN wafer:2",3",4" and 6" available as customers' Specs

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